纳米晶复合Pr2Fe14B/α-Fe永磁材料磁性的研究

采用熔体快淬的方法制备Pr₂Fe₁₄B/α-Fe纳米晶复合永磁材料.使用振动样品磁强计(VSM)测量样品的室温磁性能.实验合金成分为(Pr_xFe_94.3-xB_5.7)_0.99Zr₁(其中x＝8.2，8.6，9.0，9.4，9.8，10.2，10.6，11.0，11.4(原子分数，%)).系统地研究了辊速及合金成分对快淬带磁性能的影响，当Pr原子分数由8. 关键词： 纳米复合永磁材料 熔体快淬 2Fe₁₄B/α-Fe')" href="#">Pr₂Fe₁₄B/α-Fe 磁性     

Viscometric properties of dilute polystyrene/dioctyl phthalate solutions

We report viscometric data collected in a Couette rheometry on dilute, single‐solvent polystyrene (PS)/dioctyl phthalate (DOP) solutions over a variety of polymer molecular weights (5.5 × 10⁵ ≤ M_w ≤ 3.0 × 10⁶ Da) and system temperatures (288 K ≤ T ≤ 318 K). In view of the essential viscometric features, the current data may be classified into three categories: The first concerns all the investigated solutions at low shear rates, where the solution properties are found to agree excellently with the Zimm model predictions. The second includes all sample solutions, except for high‐molecular‐weight PS samples (M_w ≥ 2.0 × 10⁶ Da), where excellent time–temperature superposition is observed for the steady‐state polymer viscosity at constant polymer molecular weights. No similar superposition applies at a constant temperature but varied polymer molecular weights, however. The third appears to be characteristic of dilute high‐molecular‐weight polymer solutions, for which the effects of temperature on the viscosity curve are further complicated at high shear rates. The implications concerning the relative importance of hydrodynamic interactions, segmental interactions, and chain extensibility with increasing polymer molecular weight, system temperature, and shear rate are discussed. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 787–794, 2006     

Shadowing and Inverse Shadowing for C^1 Endomorphisms

In this paper, we consider the shadowing and the inverse shadowing properties for C^1 endomorphisms. We show that near a hyperbolic set a C^1 endomorphism has the shadowing property, and a hyperbolic endomorphism has the inverse shadowing property with respect to a class of continuous methods. Moreover, each of these shadowing properties is also ＂uniform＂ with respect to C^1 perturbation.     

椭圆波导FEM放大器的非线性特性研究

 以椭圆波导、平板摇摆器为FEM放大器的模型，导出了自洽的注波互作用三维非线性方程组。在此基础上编制了相应的程序。利用该程序分析了FEM放大器的饱和功率、效率以及带宽等高频特性。考虑了摇摆器渐变、空间电荷波、电子初始速度零散对高频特性的影响。     

自控液晶光阀组式光刻快门研究

通过理论推导，构建了抗蚀剂的感光特性、光源的光效与曝光量之间的数学模型，为液晶光阀代替穿孔带提供了理论依据.结合液晶光阀的工作原理和光刻快门的控制原理，对液晶光阀组的控制进行了研究并给出了其控制电路图.通过实际光刻试验，自控液晶光阀组光刻快门机构可以完成编码图案的控制，通光控制达到了预计要求，刻出的图案清晰，线条陡直.证明液晶光阀组替代穿孔带用作光刻快门是完全可行的.     

An inverse radiative transfer problem of simultaneously estimating profiles of temperature and radiative parameters from boundary intensity and temperature measurements

A parallel-plane space filled with absorbing, emitting, isotropically scattering, gray medium is studied in this paper. The boundary intensity and boundary temperature profiles are calculated for the inverse analysis. For the simultaneous estimation of temperature, absorption and scattering coefficient profiles in the medium, the sum of residuals of boundary intensity and temperature after being weighted by a balance factor is minimized through using a Newton-type iteration algorithm and the least-squares method. To avoid over-updating for the parameters, the relative updating magnitude during the iteration process is constrained not to be >0.5. It is shown that the boundary intensity measurement alone is not enough to estimate simultaneously the temperature (source) and the radiative properties (both absorption and scattering coefficients) when the measurement data contain sensitive random errors. The boundary temperature measurement can serve as a necessary supplementation to the boundary intensity to make this kind of inverse radiative transfer problem resolvable. It was shown that a compensation relationship between absorption and scattering coefficients makes it difficult to fix them accurately. Parabolic profiles for the three parameters are used to validate the estimation method. When the optical thickness approaches 4.0, the results for the radiative properties are not acceptable, although the result for temperature profile is reasonable. This means the method needs further improvements.     

C波段平面异向介质设计及其后向波特性验证

提出了一种工作在C波段的新型平面结构异向介质，它除了带宽宽和损耗小外，还具有体积小、结构简单的优点，而且能够实现工作频段的平移，频率平移范围为4—20 GHz.基于电磁波由自由空间入射半无限大异向介质平板的传输和反射数据，计算出了电波在其中传播时的相速随频率的变化曲线，结果表明所讨论的异向介质确实在预想的频段上表现出后向波特性；同时利用相位观察法进一步验证了上述的后向波特性，从而肯定了异向介质的存在. 关键词： 异向介质 宽频带 小单元 后向波特性     

一个二阶方程的振动性质及其应用

本文研究了一个二阶微分方程的解及其振动性质,利用它获得了一般二阶自共轭方程的振动性判别准则,特别对其中一类二阶微分方程的振动性给出了定量的判别方法.推广了E.Hille的工作,使E.Hille的研究结论成为本文结果的极特殊的情形,同时对一类具有“积分小”系数或可化为具有“积分小”系数的二阶微分方程的振动性与非振动性给出了简便、精确的判别方法.     

Synthesis and Properties of a Heteronuclear Ag（Ⅰ）/Ni（Ⅱ） Complex

Introduction Itiswell knownthatcyanogroupsincyanometa latessuchas[Ag(CN)2]-unitscanbeusedasbridg ingligandsandapolymericstructurecanbeformed throughsilver silver(argentophilic)interactions.This propertyhasbeenexploredintheconstructionofmany oligomericandp…     

Identity of defect causing nonideality in nearly ideal Au/n-Si Schottky barriers

We have proposed a mechanism of nonideality, i.e., the temperature dependence of the ideality factor, in nearly ideal Au/n-Si Schottky barriers. Because of the nature of metal-induced gap states, positively ionized defects close to the interface are considered to cause local lowering of the Schottky barrier height (SBH) due to downward bending of the energy band. These positively charged defects become neutralized in equilibrium with the Fermi level due to the band bending, when they are very close to the interface. However, because the SBH lowering disappears by the neutralization of donor, the energy level of donor with a usual energy level scheme rises above the Fermi level after the neutralization. This contradiction to the equilibrium neutralization is resolved by Si self-interstitial with a large negative-U property, which is generated by the fabrication process. The energy level of the donor estimated from the SBH lowering is in good agreement with that of theoretical calculation of Si self-interstitial. Thus, the defect is concluded to be the Si self-interstitial, which is distributed to more than 10 Å depth from the interface.